BSP299
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• VGS(th)= 2.1 ... 4.0 V
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Pin 1
G
Pin 2
D
Type
VDS
ID
RDS(on)
Package
Marking
BSP 299
500 V
0.4 A
4Ω
SOT-223
BSP299
Type
BSP 299
Pb-free
Yes
Pin 3
Pin 4
S
D
Tape and Reel Information
L6327
Maximum Ratings
Parameter
Symbol
Continuous drain current
ID
TA = 25 °C
Values
Unit
A
0.4
DC drain current, pulsed
IDpuls
TA = 25 °C
1.6
Avalanche energy, single pulse
mJ
E AS
ID = 1.2 A, RGS = 25 Ω
T j = 25 °C
130
Gate source voltage
V GS
Power dissipation
P tot
TA = 25 °C
V
W
1.8
ESD Class
JESD22-A114-HBM
Rev 2.3
± 20
Class 1b
1
2011-06-01
BSP299
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
-55 ... + 150
Storage temperature
Tstg
-55 ... + 150
Thermal resistance, chip to ambient air 1)
R thJA
≤ 70
Therminal resistance, junction-soldering point
R thJS
≤ 25
Values
DIN humidity category, DIN 40 040
Unit
°C
K/W
E
IEC climatic category, DIN IEC 68-1
55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 0 °C
Gate threshold voltage
500
-
-
2.1
3
4
V GS(th)
V GS=V DS, ID = 1 mA
Zero gate voltage drain current
V
V (BR)DSS
µA
IDSS
V DS = 500 V, V GS = 0 V, Tj = 25 °C
-
0.1
1
V DS = 500 V, V GS = 0 V, Tj = 125 °C
-
10
100
Gate-source leakage current
nA
IGSS
V GS = 20 V, VDS = 0 V
Drain-Source on-state resistance
-
100
Ω
RDS(on)
V GS = 10 V, ID = 0.4 A
Rev 2.3
10
-
2
3.1
4
2011-06-01
BSP299
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
S
gfs
V DS≥ 2 * ID * RDS(on)max, ID = 0.4 A
Input capacitance
0.3
pF
300
400
-
40
60
-
15
25
Crss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Turn-on delay time
Coss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
V GS = 0 V, V DS = 25 V, f = 1 MHz
Output capacitance
1.2
ns
td(on)
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Rise time
-
8
12
-
15
22
-
55
70
-
30
40
tr
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Turn-off delay time
td(off)
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Fall time
tf
V DD = 30 V, VGS = 10 V, ID = 0.3 A
RGS = 50 Ω
Rev 2.3
3
2011-06-01
BSP299
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current
A
IS
TA = 25 °C
Inverse diode direct current,pulsed
-
1.6
-
0.9
1.2
ns
trr
-
300
µC
Qrr
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Rev 2.3
-
V
V R = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
0.4
V SD
V GS = 0 V, IF = 0.8 A, Tj = 25 °C
Reverse recovery time
-
ISM
TA = 25 °C
Inverse diode forward voltage
-
-
4
2.5
-
2011-06-01
BSP299
Power dissipation
Ptot = ƒ(TA)
Ptot
Drain current
ID = ƒ(TA)
parameter: VGS ≥ 10 V
2.0
0.45
W
A
1.6
ID
0.35
1.4
0.30
1.2
0.25
1.0
0.20
0.8
0.15
0.6
0.10
0.4
0.05
0.2
0.0
0.00
0
20
40
60
80
100
120
°C
160
0
20
40
60
80
100
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
120
°C
160
TA
Transient thermal impedance
Zth JA = ƒ(tp )
parameter: D = tp / T
10 2
K/W
10 1
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
10 -3
0.05
single pulse
10 -4
0.02
0.01
10 -5
-8
-7
-6
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
10
10 s 10
tp
Rev
2.3
5
2011-06-01
BSP299
Typ. output characteristics
ID = ƒ(VDS)
parameter: V , Tj = 25 °C
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: V , Tj = 25 °C
GS
GS
0.9
0.9
14
0.9
jh
g
e
AA Ptot =
k
ifd
5V2W
10V
l
13
ID
ȍ
Ω13
b
c
0.8
0.8
A
4.5V
4.5V
11
VGS [V]
0.7
0.7
0.7
0.6
0.6
0.6
4V
4V
0.5
0.5
a
0.5
0.4
0.4
0.4
0.3
0.3
0.3
0.2
0.2
4.0
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
j
9.0
5
k
10.0
4 4
l
20.0
RDS (on)
10
10
9
9
8
7
6
5
8
7
4.5V
6
l
0.1
0.1
2 2
V
GS [V] =
a
b
4.5
c
5.0
1 1 4.0
0
0
0
0
2
2
2
4
4
4
6
6
6
8
8
8
10
10
10
0
12
14
12 V V 14
12
V
e
f
6.0 6.5
g
7.0
h
i
7.5 8.0
j
9.0
0
0.10
0.1
0.20
0.2
0.30
0.3
0.40
0.4
VDS
A
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
parameter: tp = 80 µs,
2.6
2.6
A
S
2.2
D
2.2
g
2.0
fs
2.0
1.8
1.8
1.6
1.6
1.4
1.4
1.2
1.2
1.0
1.0
0.8
0.8
0.6
0.6
0.4
0.4
0.2
0.2
0.0
0.0
0
1
2
3
4
5
6
7
8
V
V
Rev 2.3
0.60
0.5I A 0.6
D
Typ. transfer characteristics ID = f(VGS)
I
k
l
10.0 20.0
0
0.00
16
d
5.5
b
d figc ke
10V
jh
3 3
0.1
0
11
a
0.2
0.0
a4V
12
10
0.0
0.4
0.8
1.2
1.6
A
2.2
ID
GS
6
2011-06-01
BSP299
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 0.4 A, VGS = 10 V
10
Gate threshold voltage
VGS (th) = ƒ(Tj )
parameter: VGS = VDS, ID = 1 mA
11
4.6
ȍ
V
Ω 10
98%
4.0
RDS (on)
8 9
VGS(th)
3.6
8
7
6
2.8
6
2.4
98%
5 5
2%
typ
typ
2.0
4 4
3
typ
3.2
98%
7
1.6
3
1.2
2
2
0.8
1
1
0
-60
-20
-60
-20
0
0.4
20
20
60
60
100
140
180
100
°C
160
Tj
Typ. capacitances
0.0
-60
-20
20
60
100
°C
160
Tj
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 1
10 1
nF
A
IF
C
10 0
10 0
C
iss
10 -1
10 -1
Tj = 25 °C typ
Tj = 150 °C typ
C
oss
Tj = 25 °C (98%)
Tj = 150 °C (98%)
Crss
10 -2
0
5
10
15
20
25
30
V
V
Rev 2.3
40
10 -2
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
DS
7
2011-06-01
BSP299
Avalanche energy EAS = ƒ(Tj)
parameter: ID = 1.2 A, VDD = 50 V
RGS = 25 Ω, L = 163 mH
EAS
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj)
140
600
mJ
V
120
580
110
V(BR)DSS570
100
560
550
90
540
80
530
70
520
60
510
50
500
40
490
30
480
20
470
10
0
460
450
20
40
60
80
100
120
°C
160
-60
-20
20
60
100
°C
Tj
160
Tj
Safe operating area ID=f(VDS)
Typ. gate charge
parameter : D = 0.01, TC=25°
=25°C
VGS=f(Qgate); ID=0.4 A pulsed
VDD =200 V
16
V
V
GS
14
12
10
8
6
4
2
0
0
5
10
15
nC
20
Q
gate
Rev 2.3
8
2011-06-01
BSP299
Package outlines
SOT-223
Dimensions in mm
Rev 2.3
9
2011-06-01
BSP299
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.3
page 10
2011-06-01